Method for passivating imperfections in semiconductor materials

Batteries: thermoelectric and photoelectric – Thermoelectric – Radiation pyrometer

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204325, 204 38R, 204 56R, 2041291, 204130, 204140, 428195, 428203, 357 30, 357 59, H01L 3104, C25D 500

Patent

active

041971418

ABSTRACT:
A method of passivating imperfections, such as grain boundaries and/or dislocations, in semiconductor materials is disclosed which comprises selectively passing electrical current along the imperfections by employing the semiconductor material as an electrode in an electrolytic cell.

REFERENCES:
patent: 2902419 (1959-09-01), Carasso et al.
patent: 2958633 (1960-11-01), Claussen
patent: 2963411 (1960-12-01), Scott
patent: 3261074 (1966-07-01), Beauzee
patent: 3888697 (1975-06-01), Bogus et al.
patent: 3929529 (1975-12-01), Poponiak
patent: 3982265 (1976-09-01), Johnston, Jr.
patent: 3990914 (1976-11-01), Weinstein et al.
patent: 4064522 (1977-12-01), Shaw et al.
patent: 4082602 (1978-04-01), Chang et al.
H. J. Hovel et al., "Anodized GaAs Solar Cells", IBM Tech. Disc. Bull., vol. 19, p. 2808, (1976).

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