Method for passivating III-V compound semiconductors

Details Method for passivating III-V compound semiconductors Method for passivating III-V compound semiconductors

1977-05-11

1979-10-30

Smith, John D.

Coating processes

Electrical product produced

Condenser or capacitor

156605, 357 52, 427 38, 427 85, 427 87, 148 63, 148 15, B05D 512

Patent

active

041729064

ABSTRACT:
High quality native surface passivation dielectrics on Group III-Group V compound semiconductors are produced by thermal conversion of a surface layer having a specially provided composition. The electrical properties of these dielectrics meet the requirements for dielectric and passivation layers over semiconductor devices generally and in field effect devices in particular.

REFERENCES:
B. Schwartz et al. "The Influence of Native Oxides on the Degradation and Passivation of GaAs Junction Lasers" 1972 Symp. on GaAs (1972).
Phillips et al. "Fabrication of GaAsP MIS Capacitors Using a Thermal-Oxidation Dielectric-Growth Process", J. Electrochem Soc., 8-1973.
Coerver et al. "Thermal Oxidation of Gallium Arsenide Phosphide" Doctoral Thesis, Univ. of New Mexico, 8-1973.
Phillips et al. "Gallium Arsenide Phosphide MIS Capacitor Fabrication" Doctoral Thesis , Univ. of New Mexico, 5-1972.

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