Method for passivating a semiconductor junction

Details Method for passivating a semiconductor junction Method for passivating a semiconductor junction

1986-01-16

1988-01-05

Kittle, John E.

Radiation imagery chemistry: process, composition, or product th

Visible imaging including step of firing or sintering

430311, 430328, 430330, G03C 1100

Patent

active

047176415

ABSTRACT:
A method of passivating exposed junctions on a semiconductor device is provided by the use of fritted glass and a rapid heating device. The uniform distribution of heat from the rapid heating device is used to fire the fritted glass that is covering the exposed junction. The results of this combination is an increase in device yields due to less leakage across the junction.

REFERENCES:
patent: 3355291 (1967-11-01), Baird et al.
patent: 3632434 (1972-01-01), Hutson
patent: 3982941 (1976-09-01), Inskip
patent: 4201579 (1980-05-01), Robinson et al.
patent: 4332879 (1982-06-01), Pastor et al.
patent: 4551353 (1985-11-01), Hower et al.

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