Method for packaging a microelectronic device using on-die...

Details Method for packaging a microelectronic device using on-die... Method for packaging a microelectronic device using on-die...

2006-07-04

2006-07-04

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

C257S737000

Reexamination Certificate

active

07071024

ABSTRACT:
Expanded bond pads are formed over a passivation layer on a semiconductor wafer before the wafer is diced into individual circuit chips. After dicing, the individual chips are packaged by fixing each chip within a package core and building up one or more metallization layers on the resulting assembly. In at least one embodiment, a high melting temperature (lead free) alternative bump metallurgy (ABM) form of controlled collapse chip connect (C4) processing is used to form relatively wide conducting platforms over the bond pads on the wafer.

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