Method for p-type doping of semiconductor structures formed of g

Details Method for p-type doping of semiconductor structures formed of g Method for p-type doping of semiconductor structures formed of g

1993-07-27

1995-03-21

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117102, 437105, 437126, 437133, 148DIG64, H01L 21203

Patent

active

053986415

ABSTRACT:
A method and apparatus (10) for forming a p-doped layer (68, 80, 92) of Group II and Group VI elements by molecular beam epitaxial process in which a nitrogen dopant is introduced as the layer (68, 80, 92) is being grown. In one embodiment, molecular nitrogen is passed through a plasma generator (46) for converting it to activated nitrogen, and the activated nitrogen is conducted through an elongated guide tube (50) toward the substrate (66) upon which a Group II-Group VI layer (68, 80, 92) is being grown. In one embodiment, an n-type dopant source (72) is also provided, the apparatus (10) being operable for forming electrical devices (86, 88) having successive layers (78, 80, 90, 92, 94) of differing electrical characteristics.

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