Method for p-doping of a light-emitting device

Fishing – trapping – and vermin destroying

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437107, 437110, 117102, H01L 2120

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active

055478980

ABSTRACT:
A method for controlling carbon doping levels in a Distributed Bragg Reflectors (DBRs) for a Vertical Cavity Surface Emitting Laser (VCSELs) devices is provided. A first stack of mirrors (105) is deposited on the surface (101) of the substrate (102). A first cladding region (106) is deposited on the first stack of mirrors (105). An active layer (108) is deposited on the first cladding layer (106). A second cladding layer (109) is deposited on the active layer (108). A second stack of mirrors (111) is deposited on the second cladding layer (109) having a carbon doping level controlled by ratio of Group V containing organometallic (tertiarybutylarsine) to Group III organometallics (trimethylgallium and trimethylaluminum).

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patent: 5226055 (1993-07-01), Downey et al.
patent: 5244829 (1993-09-01), Kim
R. M. Lum et al. "Controlled doping of GaAs films grown with tertiarybutylarsine" J. Appl. Phys. 67(10), 15 May 1990, pp. 6507-6512.
M. A. Tischler, et al. "Acceptor doping of (Al,Ga)As using carbon by metalorganic vapor phase epitaxy," Journal of Crystal Growth 107 (1991) pp. 268-73.
Kobayashi, et al. "Carbon-Doped GaAs Grown by Metalorganic Vapor Phase Epitaxy Using TMAs and TEG," Journal of Crystal Growth 102 (1990) pp. 183-186.

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