Semiconductor device manufacturing: process – Making passive device – Planar capacitor
Patent
1996-07-23
1998-10-20
Niebling, John
Semiconductor device manufacturing: process
Making passive device
Planar capacitor
438 3, 438240, 257310, H01L 21324, H01L 21477
Patent
active
058245901
ABSTRACT:
A two-step method of low temperature oxidation of a ferroelectric layer followed by high temperature crystallization of the ferroelectric film to protect underlying semiconductor layers against high temperature oxidation which can cause the conductive layers thereof to become nonconductive. The thus provides a barrier layer on a semiconductor wafer, depositing a ferroelectric layer on the barrier layer, heating the semiconductor wafer at a temperature in a range of about 400.degree. C. to about 700.degree. C. in the presence of oxygen to oxidize the ferroelectric layer, and then heating the semiconductor wafer at a temperature in a range of about 700.degree. C. to about 900.degree. C. in a non-oxidizing ambient to crystallize the oxidized, ferroelectric layer.
REFERENCES:
patent: 4888820 (1989-12-01), Chen et al.
patent: 5189503 (1993-02-01), Suguro et al.
patent: 5439845 (1995-08-01), Watanabe et al.
patent: 5561307 (1996-10-01), Mihara et al.
patent: 5696018 (1997-12-01), Summerfelt et al.
Micro)n Technology, Inc.
Nguyen Ha Tran
Niebling John
LandOfFree
Method for oxidation and crystallization of ferroelectric materi does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for oxidation and crystallization of ferroelectric materi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for oxidation and crystallization of ferroelectric materi will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-243851