Method for opto-electronic integration on a SOI substrate

Details Method for opto-electronic integration on a SOI substrate Method for opto-electronic integration on a SOI substrate

2008-04-08

2008-04-08

Fourson, George R. (Department: 2823)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Including isolation structure

C438S309000, C438S311000, C438S318000, C257S350000, C257S517000, C257S565000

Reexamination Certificate

active

11729232

ABSTRACT:
According to an exemplary embodiment, a method includes providing a silicon-on-insulator substrate including a buried oxide layer situated over a bulk silicon substrate and a silicon layer situated over the buried oxide layer. A trench is formed in the silicon layer and the buried oxide layer, where the trench exposes a portion of the bulk silicon substrate, and where the trench is situated adjacent to an optical region of said silicon-on-insulator substrate. According to this exemplary embodiment, an epitaxial layer is formed on the exposed portion of the bulk silicon substrate in the trench. The epitaxial layer and the bulk silicon substrate form a bulk silicon electronic region of the silicon-on-insulator substrate.

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