Method for optically testing semiconductor devices

Optics: measuring and testing – By light interference – For dimensional measurement

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C356S457000

Reexamination Certificate

active

07733499

ABSTRACT:
A method for optically testing semiconductor devices or wafers using a holographic optical interference system with an infrared or thermal light source providing a light beam of coherent wavelength with a wavelength to which the semiconductor material is transparent, splitting the light beam into a reference beam and an object beam, imposing the object beam on the semiconductor material to generate a reflected object beam reflected from interior structures of the semiconductor material, adjusting the angle of the reference beam relative to the object beam between a plurality of angles with the semiconductor material being a different state for each angle of the reference beam, imposing the reflected object beam and the reference beam onto a detection device to create a plurality of interference patterns, one for each of the reference beam angles, and comparing the interference patterns to one another to determine and display characteristics within the semiconductor material.

REFERENCES:
patent: 3663194 (1972-05-01), Greenstein et al.
patent: 3956698 (1976-05-01), Malmberg et al.
patent: 4053833 (1977-10-01), Malmberg et al.
patent: 4242635 (1980-12-01), Burns
patent: 4355278 (1982-10-01), Burns et al.
patent: 4415851 (1983-11-01), Langner et al.
patent: 4482863 (1984-11-01), Auston et al.
patent: 4554453 (1985-11-01), Feigt et al.
patent: 4618819 (1986-10-01), Mourou et al.
patent: 4681449 (1987-07-01), Bloom et al.
patent: 4703260 (1987-10-01), Beha et al.
patent: 4714826 (1987-12-01), Goutzoulis
patent: 4745361 (1988-05-01), Nees et al.
patent: 4758092 (1988-07-01), Heinrich et al.
patent: 4760249 (1988-07-01), Baskett
patent: 4786864 (1988-11-01), Beha et al.
patent: 4816755 (1989-03-01), Look et al.
patent: 4827212 (1989-05-01), Kamieniecki
patent: 4843329 (1989-06-01), Beha et al.
patent: 4868492 (1989-09-01), Beha et al.
patent: 4875006 (1989-10-01), Henley et al.
patent: 4881029 (1989-11-01), Kawamura
patent: 4896109 (1990-01-01), Rauscher
patent: 4933634 (1990-06-01), Cuzin et al.
patent: 4970461 (1990-11-01), LePage
patent: 4983911 (1991-01-01), Henley
patent: 4999577 (1991-03-01), Beha et al.
patent: 5034683 (1991-07-01), Takahashi et al.
patent: 5059897 (1991-10-01), Aton et al.
patent: 5216359 (1993-06-01), Makki et al.
patent: 5422723 (1995-06-01), Paranjpe et al.
patent: 5682236 (1997-10-01), Trolinger et al.
patent: 5999152 (1999-12-01), Liao et al.
patent: 6172752 (2001-01-01), Haruna et al.
patent: 6218655 (2001-04-01), Ogasawara et al.
patent: 6512385 (2003-01-01), Pfaff et al.
patent: 6803777 (2004-10-01), Pfaff et al.
patent: 6972577 (2005-12-01), Pfaff et al.
patent: 7206078 (2007-04-01), Pfaff et al.
patent: 7323889 (2008-01-01), Pfaff et al.
patent: 7400411 (2008-07-01), Pfaff
patent: 2005/0231733 (2005-10-01), Pfaff
patent: 2006/0244974 (2006-11-01), Pfaff
patent: 2007/0019209 (2007-01-01), Pfaff
H.K. Heinrich et al., “Noninvasive sheet charge density probe for integrated silicon devices,” Appl. Phys. Lett. 48(16) Apr. 21, 1986, p. 1066-1068 with Errata, Appl. Phys. Lett. 48(26) Jun. 30, 1986, p. 1811.
Ivanova et al., “Semiconductor Photographic System Based on High-Resistivity Gallium Arsenide,” Soviet Physics—Semiconductors, vol. 6, No. 9, Mar. 1973, pp. 1585-1587.
B.J. Thompson, “Holographic Particle Sizing Techniques,” J. Physics E: Scientific Instruments, vol. 7, pp. 781-788, 1974.
C.N. Kurtz, Holographic Polarization Recording with an Encoded Reference Beam, Applied Physics Letters 14(2), 59-61, 1969.
Dickson et al., Holographic Polarization-Separation Elements, Applied Optics 33(23) 5378-5385, 1994.
Saito et al., Solvent Vapour Method in Thermoplastic Photoconductor Media, J. Optics, 1980, pp. 285-292.
Rastogi and Pflug, Holographic Moire Phase Reinforcement Procedure to Obtain Variable Sensitivity Surface Topographical Mapping: Extension to Phase Stepping, Optics and Laser Technology 1992, vol. 24 (4), p. 203-207.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for optically testing semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for optically testing semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for optically testing semiconductor devices will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4215422

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.