Method for operating an electrical writable and erasable...

Details Method for operating an electrical writable and erasable... Method for operating an electrical writable and erasable...

2006-12-05

2006-12-05

Zarabian, Amir (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185030, C365S185240

Reexamination Certificate

active

07145807

ABSTRACT:
A method is provided for operating an electrical writable and erasable memory cell, which has a channel region that can be operated in a first and a second direction, wherein information is stored as the difference of an effective parameter.

REFERENCES:
patent: 5768192 (1998-06-01), Eitan
patent: 6011725 (2000-01-01), Eitan
patent: 6215148 (2001-04-01), Eitan
patent: 6348711 (2002-02-01), Eitan
patent: 6477084 (2002-11-01), Eitan
patent: 6664588 (2003-12-01), Eitan
patent: WO 98/03977 (1998-01-01), None
patent: WO 99/60631 (1999-11-01), None
Eitan, B., “NROM: A Novel Localized Trapping, 2-Bit Nonvolatile Memory Cell,” IEEE Electron Device Letters, vol. 21, No. 11, Nov. 2000, pp. 543-545.

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