Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2006-11-22
2009-12-08
Deo, Duy-Vu N (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S692000, C438S693000
Reexamination Certificate
active
07629258
ABSTRACT:
The present invention provides a method of removing silicon nitride at about the same removal rate as silicon dioxide by CMP. The method utilizes a polishing slurry that includes colloidal silica abrasive particles dispersed in water and additives that modulate the silicon dioxide and silicon nitride removal rates such that they are about the same. In one embodiment of the invention, the additive is lysine or lysine mono hydrochloride in combination with picolinic acid, which is effective at a pH of about 8. In another embodiment of the invention, the additive is arginine in combination with picolinic acid, which is effective at a pH of about 10.
REFERENCES:
patent: 6436834 (2002-08-01), Lee et al.
patent: 6491843 (2002-12-01), Srin et al.
patent: 6533832 (2003-03-01), Steckenrider et al.
patent: 6544892 (2003-04-01), Srinivasan et al.
patent: 6702954 (2004-03-01), Her et al.
patent: 7005382 (2006-02-01), Nishimoto et al.
patent: 2003/0110710 (2003-06-01), Oshima et al.
patent: 2003/0176151 (2003-09-01), Tam et al.
patent: 2004/0132305 (2004-07-01), Nishimoto et al.
patent: 2004/0152309 (2004-08-01), Carter et al.
patent: 2004/0186206 (2004-09-01), Yoneda et al.
patent: 2005/0028450 (2005-02-01), Xu et al.
patent: 2005/0042877 (2005-02-01), Salfelder et al.
patent: 2005/0079709 (2005-04-01), Delehanty et al.
patent: 2005/0136673 (2005-06-01), Xu et al.
patent: 2006/0216935 (2006-09-01), Oswald et al.
patent: 2007/0093182 (2007-04-01), Kollodge
Natarajan, Anita; Hedge, Sharath; and Babu, S.V.; Selective chemical-mechanical planarization of polysilicon during fabrication of MEMS devices; poster; Mar. 28, 2005; exhibited during the Materials Research Society Spring Meeting in San Francisco, California.
Carter, Philip W.; and Johns, Timothy P.; Interfacial Reactivity Between Ceria and Silicon Dioxide and Silicon Nitride Surfaces, Organic Additive Effects; Electrochemical and Solid-State Letters, 8 G218-G221 (2005); The Electrochemical Society, Inc.
Anjur, Sriram; Dysard, Jeffrey; Feeney; Paul; Johns, Timothy; Kason, Mark; Perez, Maria; and Romine, Richard; Selective Silicon Nitride Polishing; presentation paper; Oct. 10, 2006; 2006 International Conference on Planarization/CMP Technology; Foster City, California.
Kim, Sang-Kyun; Sohn, Hyung-Min; Paik, Ungyu; Katoh, Takeo; and Park, Jea-Gun; A Reverse Selectivity Ceria Slurry for the Damascene Gate Chemical Mechanical Planarization Process; Japanese Journal of Applied Physics, vol. 43, Nol. 11A, 2004, pp. 7434-7438; The Japan Society of Applied Physics.
Commonly Owned Application Serial No. 11562443, filed Nov. 22, 2006.
Commonly Owned Application Serial No. 11562447, filed Nov. 22, 2006.
Babu Suryadevara V.
Natarajan Anita
Clarkson University
Deo Duy-Vu N
Infotonics Technology Center Inc.
Rankin , Hill & Clark LLP
LandOfFree
Method for one-to-one polishing of silicon nitride and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for one-to-one polishing of silicon nitride and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for one-to-one polishing of silicon nitride and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4146418