Method for obtaining uniform etch by modulating bias on extensio

Details Method for obtaining uniform etch by modulating bias on extensio Method for obtaining uniform etch by modulating bias on extensio

1981-11-12

1983-07-12

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

156643, 204298, C23C 1500, C23F 100

Patent

active

043929320

ABSTRACT:
A method for etching a semiconductor wafer on an RF etch table employs a succession of different biases on an extension member positioned adjacent the periphery of the table. The extension member is electrically conductive, but is insulated from the etch table. The extension member is positioned with respect to the periphery of the table in a manner such that the plasma sheath induced above the etch table is continued beyond the periphery of the table, thereby eliminating the focusing of ions on the edges of an item being etched on the table. As different bias voltages are applied to the extension member, different etch profiles are experienced on the semiconductor wafer. The aggregation of etch profiles produces a more uniform overall etch.

REFERENCES:
patent: 3730873 (1973-05-01), Pompei et al.
patent: 4333814 (1982-06-01), Kuyel

Affiliated with

Also associated with

Rating

Method for obtaining uniform etch by modulating bias on extensio does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for obtaining uniform etch by modulating bias on extensio, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for obtaining uniform etch by modulating bias on extensio will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-197467