Method for obtaining reversible resistance switches on a...

Semiconductor device manufacturing: process – Having magnetic or ferroelectric component

Reexamination Certificate

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C438S654000, C257S295000

Reexamination Certificate

active

06939724

ABSTRACT:
A method for obtaining reversible resistance switches on a PCMO thin film when integrated with a highly crystallized seed layer includes depositing, by MOCVD, a seed layer of PCMO, in highly crystalline form, thin film, having a thickness of between about 50 Å to 300 Å, depositing a second PCMO thin film layer on the seed layer, by spin coating, having a thickness of between about 500 Å to 3000 Å, to form a combined PCMO layer; increasing the resistance of the combined PCMO film in a semiconductor device by applying a negative electric pulse of between about −4V to −5V, having a pulse width of between about 75 nsec to 1 μsec; and decreasing the resistance of the combined PCMO layer in a semiconductor device by applying a positive electric pulse of between about +2.5V to +4V, having a pulse width greater than 2.0 μsec.

REFERENCES:
patent: 6204139 (2001-03-01), Liu et al.
patent: 6473332 (2002-10-01), Ignatiev et al.
patent: 2003/0148545 (2003-08-01), Zhuang et al.
Liu et al.,Electric-pulse-induced reversible resistance change effect in magnetoresistive films, Applied Physics Letters, vol. 76, No. 19; May 8, 2000, pp 2749-2751.

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