Method for non-volatile memory fabrication

Details Method for non-volatile memory fabrication Method for non-volatile memory fabrication

2005-12-05

2008-12-02

Menz, Douglas M (Department: 2891)

Semiconductor device manufacturing: process

Making passive device

Resistor

C438S239000, C438S240000, C257S516000, C257SE21008, C257SE21664

Reexamination Certificate

active

07459371

ABSTRACT:
A method for non-volatile memory fabrication is provided, in which a substrate is provided, a bottom electrode is formed on the substrate, a solution with precursors of Zr and Sr is coated on the bottom electrode, the solution on the bottom electrode surface is dried and then fired to form a resistor layer of SrZrO3, and a top electrode is formed on the resistor layer.

REFERENCES:
patent: 6445024 (2002-09-01), Kwon et al.
patent: 6965137 (2005-11-01), Kinney et al.
patent: 2002/0154554 (2002-10-01), Higuchi et al.
patent: 2003/0157250 (2003-08-01), Mukherjee et al.
R.Wurm, O.Dernovsek and P.Greil “Sol-Gel derived SrTiO3 and SrZrO3 coatings on SiC and C-fibers”, Journal of Materials Sciecne 34 (1999), pp. 4031-4037.
Y.K.Lu, C.H.Chen, W.Zhu, T.Yu and X.F.Chen Structural and Electrical Properties of SrZrO3 Thin Films on Different Pt bottom electrodes, Ceramics International 30 (2004), pp. 1547-1551.

Affiliated with

Also associated with

Rating

Method for non-volatile memory fabrication does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for non-volatile memory fabrication, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for non-volatile memory fabrication will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4042624