Method for non-destructive testing of semiconductor articles

Details Method for non-destructive testing of semiconductor articles Method for non-destructive testing of semiconductor articles

1977-07-25

1978-11-14

Tung, T.

Chemistry: electrical and wave energy

Processes and products

204195R, G01N 2746

Patent

active

041254406

ABSTRACT:
A non-destructive method of mapping damage sites in the surface of a semiconductor article, such as a silicon wafer, establishes an interface between the semiconductor and a dilute acid electrolyte. The semiconductor article is negatively biased with respect to the electrolyte and the semiconductor surface is evenly illuminated. The biasing voltage and the illumination intensity are chosen such that small hydrogen bubbles, which stick to the surface of the semiconductor article, are produced at the damage sites. The locations of the bubbles are detected and recorded.

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Markovits, "IBM Technical Disclosure Bulletin," vol. 18, No. 11, Apr. 1976, p. 3623.
Edmonds et al., "IBM Technical Disclosure Bulletin," vol. 18, No. 12, p. 4012, May, 1976.

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