Method for non-destructive removal of semiconductor devices

Details Method for non-destructive removal of semiconductor devices Method for non-destructive removal of semiconductor devices

1976-03-12

1977-03-22

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29590, 252514, B01J 1700

Patent

active

040128326

ABSTRACT:
Semiconductor devices having a conductive lead pattern on the bottom of the device are bonded to conductive pads on a substrate to form an electrical connection therewith. The connection comprises two layers of conductive adhesive plastic separated by a small chip of conductive alloy which melts above the curing temperature of the adhesive plastic. The non-destructive removal of a semiconductor device from the substrate is accomplished by heating only the semiconductor device to be removed until the alloy chip under the device melts, thus, permitting the non-destructive removal of the semiconductor device without the application of force which would tend to destroy the semiconductor device.

REFERENCES:
patent: 3751799 (1973-08-01), Reynolds
patent: 3781975 (1974-01-01), Ressel
patent: 3968055 (1976-07-01), Palmer
patent: 3969813 (1976-07-01), Minetti

Affiliated with

Also associated with

Rating

Method for non-destructive removal of semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for non-destructive removal of semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for non-destructive removal of semiconductor devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1949211