Radiant energy – Invisible radiant energy responsive electric signalling – Ultraviolet light responsive means
Patent
1990-07-10
1991-07-23
Hannaher, Constantine
Radiant energy
Invisible radiant energy responsive electric signalling
Ultraviolet light responsive means
250358, G01N 2155
Patent
active
050346113
ABSTRACT:
A semiconductor layer is irradiated with an intensity-modulated laser emission to induce a modulated optical reflectivity which is a valid measure for the density of the electronic inhomogeneities in the semiconductor layer. The use of a test laser beam having a wavelength in a range of 200-345 nm makes exact measurements possible in the entire range of application and is particularly enabling for identification of low and high implantation doses and the identification of residual damage in crystalline semiconductor layers.
REFERENCES:
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patent: 4652757 (1987-03-01), Carver
Jon Opsal et al., "Temporal Behavior of Modulated Optical Reflectance in Silicon", J. Appl. Phys. 61(1), (Jan. 1, 1987), pp. 240-248.
Smith et al., "Ion Implant Monitoring With Thermal Wave Technology", Appl. Phys. Lett. 47 (6), (Sep. 15, 1985), pp. 584-586.
Opsal et al., "Thermal and Plasma Wave Depth Profiling in Silicon", Appl. Phys. Lett. 47(5), (Sep. 1, 1985), pp. 498-500.
S. Wurn, "Modulierte Optische Reflektivitat".
Alpern Peter
Savignac Dominique
Wurm Stefan
Hannaher Constantine
Siemens Aktiengesellschaft
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