Semiconductor device manufacturing: process – Including control responsive to sensed condition – Electrical characteristic sensed
Reexamination Certificate
2006-02-21
2010-06-15
Cao, Phat X (Department: 2814)
Semiconductor device manufacturing: process
Including control responsive to sensed condition
Electrical characteristic sensed
C438S004000, C438S005000, C438S012000, C438S013000, C257S141000, C257SE31001, C257SE31002, C257SE31032
Reexamination Certificate
active
07736915
ABSTRACT:
A method for neutralizing trapped charges in a buried oxide layer. The method includes providing a semiconductor structure which includes (a) a semiconductor layer, (b) a charge accumulation layer on top of the semiconductor layer, and (c) a doped region in direct physical contact with the semiconductor layer, wherein the charge accumulation layer comprises trapped charges of a first sign, and wherein the doped region and the semiconductor layer form a P-N junction diode. Next, free charges are generated in the P-N junction diode, wherein the free charges are of a second sign opposite to the first sign. Next, the free charges are accelerated towards the charge accumulation layer, resulting in some of the free charges entering the charge accumulation layer and neutralizing some of the trapped charges in the charge accumulation layer.
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Aitken John M.
Cannon Ethan Harrison
Strong Alvin Wayne
Cao Phat X
Garrity Diana C
International Business Machines - Corporation
Kotulak Richard M.
Schmeiser Olsen & Watts
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