Method for multi-zone high-density inductively-coupled plasma ge

Details Method for multi-zone high-density inductively-coupled plasma ge Method for multi-zone high-density inductively-coupled plasma ge

1996-07-10

1998-12-08

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

216 67, 427569, H01L 21461

Patent

active

058468838

ABSTRACT:
A multi-zone high-density inductively-coupled plasma source includes a first individually controlled RF antenna segment for producing a plasma from a process gas. A second individually controlled coil segment is included in the ICP source for producing a plasma from a process gas. In various embodiments, more than two sets of individually controlled coil segments may be used. In one embodiment, a separate power supply may be used for each coil segment individually.
Another aspect of this invention is a hermetically-sealed inductively-coupled plasma source structure and method of fabrication which eliminates the possibility of process contamination, improves the source hardware reliability and functionality, and improves the vacuum integrity and ultimate base pressure of the plasma system.

REFERENCES:
patent: 4755345 (1988-07-01), Baity, Jr. et al.
patent: 5431799 (1995-07-01), Moseley et al.
patent: 5540824 (1996-07-01), Yin et al.
patent: 5637150 (1997-06-01), Wartski et al.
patent: 5653811 (1997-08-01), Chan
patent: 5683548 (1997-11-01), Hartig et al.
PCT International Search Report; Mailing Date Oct. 24, 1997.

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