Method for more uniformly spacing features in a semiconductor mo

Details Method for more uniformly spacing features in a semiconductor mo Method for more uniformly spacing features in a semiconductor mo

1984-11-19

1986-05-06

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 29576B, 148 15, 148187, 357 34, 357 91, H01L 21265, H01L 2126, B05D 306

Patent

active

045862435

ABSTRACT:
The unique initial masking step is used in a method of more predictably and uniformly spacing features on a surface of a semiconductor device by combinining it with two dielectric maskants. A unique semiconductor device masking is claimed in which semiconductor device features are initially spaced by means of pitch, i.e. line and a contiguous space, instead of just a line in the initial masking.

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