Method for more uniformly spacing features in a lateral bipolar

Details Method for more uniformly spacing features in a lateral bipolar Method for more uniformly spacing features in a lateral bipolar

1983-01-14

1985-10-01

Larkins, William D.

357 20, 357 55, H01L 2704, H01L 2906, H01L 2972

Patent

active

045449406

ABSTRACT:
The unique initial masking step is used in a method of more predictably and uniformly spacing features on a surface of a semiconductor device by combining it with two dielectric maskants. A unique semiconductor device masking is claimed in which semiconductor device features are initially spaced by means of pitch, i.e. line and a contiguous space, instead of just a line in the initial masking.

REFERENCES:
patent: 3210188 (1965-10-01), Gorig
patent: 3769112 (1973-10-01), Shaheen et al.
patent: 3945857 (1976-03-01), Schinella et al.
patent: 4001061 (1977-01-01), Ahn et al.
patent: 4157268 (1979-06-01), Bergeron et al.
patent: 4268951 (1981-05-01), Elliott et al.
patent: 4268952 (1981-05-01), Gaensslen et al.
patent: 4272307 (1981-06-01), Mayrand
patent: 4329703 (1982-05-01), Priel et al.
patent: 4419685 (1983-12-01), Sugawara et al.

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