Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate
2007-01-29
2009-11-10
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
C257S415000, C257SE29324
Reexamination Certificate
active
07615788
ABSTRACT:
A device and method of forming electronics and microelectromechanical on a silicon carbide substrate having a slow etch rate is performed by forming circuitry on the substrate. A protective layer is formed over the circuitry having a slower etch rate than the etch rate of the silicon carbide substrate. Microelectromechanical structures supported by the substrate are then formed. The circuitry comprises a field effect transistor in one embodiment, and the protective layer comprises a heavy metal layer.
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Atwell Andrew R.
Balseanu Mihaela
Duster Jon
Hailu Eskinder
Kornegay Kevin
Cornell Research Foundation Inc.
Mandala Victor A
Schwegman Lundberg & Woessner, P.A.
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