Method for monitoring surface stress

Details Method for monitoring surface stress Method for monitoring surface stress

1996-08-27

1997-12-02

Dougherty, Elizabeth L.

Measuring and testing

Specimen stress or strain, or testing by stress or strain...

By loading of specimen

73777, 73841, G01L 124

Patent

active

056938896

ABSTRACT:
A piece of single crystal silicon is embedded in a material such that the licon is flush with the surface thereof. The silicon is illuminated with infrared radiation having a wavelength in the range of 800-1100 nanometers. Isochromatic fringe patterns projected from the silicon are monitored as a direct indication of the amount of stress experienced at the surface.

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