Method for monitoring rapid thermal process integrity

Details Method for monitoring rapid thermal process integrity Method for monitoring rapid thermal process integrity

1998-03-13

2000-01-18

Dutton, Brian

Semiconductor device manufacturing: process

With measuring or testing

Optical characteristic sensed

438 17, G01R 3126, H01L 2166

Patent

active

060157178

ABSTRACT:
A method for determining the integrity of a rapid thermal process device which is sensitive to atmospheric leaks. The method includes the steps of providing a wafer having a susceptibility to oxidation-enhanced diffusion into the device. The wafer is then annealed in an inert ambient, and the oxide thickness and sheet resistance of the wafer are then measured. In a further aspect of the invention, a control wafer is simultaneously processed or sequentially processed in the chamber. The control wafer is not sensitive to temperature variation. Following the theories of statistical process control, the analysis of the oxide thickness, sheet resistance and temperature control wafer will allow a determination of whether the ambient leaks have occurred in the system.

REFERENCES:
patent: 5659467 (1997-08-01), Vickers
patent: 5863807 (1999-01-01), Jang et al.

Affiliated with

Also associated with

Rating

Method for monitoring rapid thermal process integrity does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for monitoring rapid thermal process integrity, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for monitoring rapid thermal process integrity will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-562655