Method for monitoring oxide film deposition

Details Method for monitoring oxide film deposition Method for monitoring oxide film deposition

2005-02-09

2008-08-05

Tran, Minh-Loan T (Department: 2826)

Semiconductor device manufacturing: process

With measuring or testing

C438S264000, C438S786000, C438S508000, C438S508000

Reexamination Certificate

active

07407820

ABSTRACT:
A method for monitoring oxide film deposition is disclosed. The method utilizes monitor wafers having silicon nitride films thereon instead of bare wafers to monitor the growth of silicon oxide films in a furnace. The method for monitoring oxide film deposition includes the following steps. First of all, a monitor wafer having silicon nitride film and a process wafer are provided. Next an oxide layer is formed on the monitor wafer and the process wafer, and the thickness of the oxide layer is controlled substantially equally on the monitor wafer and the process wafer. Then the thickness of the oxide layer on the monitor wafer and the process wafer is measured.

REFERENCES:
patent: 6339000 (2002-01-01), Bhattacharya et al.
patent: 6528433 (2003-03-01), Gartner et al.
patent: 2005/0124081 (2005-06-01), Ishii et al.
S. Wolf, Silicon Processing for the VLSI Era, 1990, Lattice Press, vol. 2, 621-638.

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