Method for monitoring implantation depth of impurity

Details Method for monitoring implantation depth of impurity Method for monitoring implantation depth of impurity

2006-12-05

2006-12-05

Thai, Luan (Department: 2891)

Semiconductor device manufacturing: process

With measuring or testing

C438S527000, C438S530000, C438S765000, C438S766000

Reexamination Certificate

active

07144746

ABSTRACT:
The present invention provides a method for measuring an implantation depth of an impurity injected into a wafer by an ion implantation device, using a measurement device and monitoring whether the measured implantation depth of impurity falls within an allowable range, comprising the steps of using, as a measuring wafer, a wafer having an insulating film and an Si layer formed on the insulating film with a thickness of a 1000 Å unit or less; implanting the impurity in the measuring wafer from above the surface of the Si layer, corresponding to a main surface of the measuring wafer and heat-treating the measuring wafer; and measuring surface resistivity of the main surface of the heat-treated measuring wafer by the measurement device and detecting, as an implantation depth of the impurity from the main surface, a concentration peak depth from the main surface, which corresponds to the surface resistivity and at which a concentration of the impurity implanted in the measuring wafer reaches a peak.

REFERENCES:
patent: 3897276 (1975-07-01), Kondo
patent: 5604150 (1997-02-01), Mehrad
patent: 5882947 (1999-03-01), Lin et al.
patent: 6867055 (2005-03-01), Song
patent: 2005/0142671 (2005-06-01), Wu et al.
patent: 2003-151913 (2003-05-01), None

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