Method for monitoring edge exclusion during chemical...

Details Method for monitoring edge exclusion during chemical... Method for monitoring edge exclusion during chemical...

2008-09-23

2008-09-23

Bui, Bryan (Department: 2863)

Data processing: measuring, calibrating, or testing

Measurement system

Dimensional determination

Reexamination Certificate

active

11676320

ABSTRACT:
A method is provided for measuring edge exclusion on a workpiece that includes a wafer having a film disposed thereon. The method is performed by a CMP system employing a platen and a thickness sensor coupled to the platen and positioned to repeatedly travel a path over the edge of the film during polishing. The method comprises measuring the thickness of the workpiece during selected iterations of the probe path, and establishing from the wafer thickness measurements the length of time the probe is over the film (ton) during the selected iterations. Edge exclusion is determined for at least one iteration utilizing a function related to ton.

REFERENCES:
patent: 2003/0058449 (2003-03-01), Banet et al.

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