Method for monitoring edge bead removal process of copper...

Details Method for monitoring edge bead removal process of copper... Method for monitoring edge bead removal process of copper...

2006-12-27

2008-05-06

Vinh, Lan (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S008000, C438S754000, C134S001100, C134S001200

Reexamination Certificate

active

07368397

ABSTRACT:
Disclosed is a method for monitoring an edge bead removal process for a copper metal interconnection. The method includes the steps of (a) forming a copper metal layer on a semiconductor wafer, (b) performing the edge bead removal (EBR) process of removing the copper metal layer formed in an edge area of the semiconductor wafer, and (c) determining whether copper residues exist by measuring a reflection coefficient Rc of the copper metal layer formed in a center area of the semiconductor wafer and a reflection coefficient (Rb) in the edge area of the semiconductor wafer which is subject to the edge bead removal (EBR) process.

REFERENCES:
patent: 6494219 (2002-12-01), Nayak et al.
patent: 7196782 (2007-03-01), Fielden et al.
patent: 2006/0094136 (2006-05-01), Borden et al.

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