Method for modifying the easy direction of magnetization of an a

Details Method for modifying the easy direction of magnetization of an a Method for modifying the easy direction of magnetization of an a

1978-07-28

1980-10-14

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Magnetic materials

148 3155, H01F 100

Patent

active

042279470

ABSTRACT:
The easy direction of magnetization of an amorphous magnetic film is brought in the plane of the film by annealing this film in an oxygen-free atmosphere composed of a gas selected from the group comprising argon, neon, krypton and xenon at a temperature below the temperature of crystallization of the alloy which constitutes the film. The depth of penetration of the rare gas into the film is adjusted by modifying the parameters of annealing temperature and time in order to modify the easy direction of magnetization to a greater or lesser depth within the film.

REFERENCES:
patent: 4137075 (1979-01-01), Ray et al.
patent: 4140525 (1979-02-01), Ray
Journal of Applied Physics, vol. 45, No. 9, Sep. 1974, Hasegawa et al.

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