Method for modifying photomask layout

Details Method for modifying photomask layout Method for modifying photomask layout

2008-12-24

2011-11-08

Dinh, Paul (Department: 2825)

Computer-aided design and analysis of circuits and semiconductor

Design of semiconductor mask or reticle

Analysis and verification

C716S051000, C716S055000

Reexamination Certificate

active

08056024

ABSTRACT:
A method for modifying a photomask layout includes the following steps. First, a photomask layout having at least an edge is provided. A plurality of evaluation points are positioned on the edge. Then, the photomask layout is interpreted to have an interpreted photomask layout and an interpreted edge pattern. The interpreted edge pattern is formed by interpreting the above-mentioned edge. After that, a shift between the edge and the interpreted edge and corresponding to each of the evaluation points is calculated. Afterwards, a shift gradient between two evaluation points can be derived from the shift. Finally, a number of segments between each two evaluation points can be estimated.

REFERENCES:
patent: 5991006 (1999-11-01), Tsudaka
patent: 7384710 (2008-06-01), Ogawa et al.
patent: 2005/0229148 (2005-10-01), Melvin, III
patent: 2006/0129968 (2006-06-01), Pierrat
patent: 2007/0143733 (2007-06-01), Zach et al.

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