Data processing: structural design – modeling – simulation – and em – Modeling by mathematical expression
Reexamination Certificate
2005-01-18
2005-01-18
Thomson, W. (Department: 2123)
Data processing: structural design, modeling, simulation, and em
Modeling by mathematical expression
C703S013000, C703S014000
Reexamination Certificate
active
06845347
ABSTRACT:
Method and apparatus determine the performance of an integrated circuit that includes at least one of a plurality of deep-well trench dynamic random-access memory (DRAM) cells. The method includes executing a circuit simulator for designing an integrated circuit that contains at least one of a plurality of DRAM cells. Further, the method includes calculating a set of output parameters with the circuit simulator for each of the plurality of DRAM cells utilizing, for example, a deep-well trench DRAM cell model for each of the plurality of DRAM cells.
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Wong Shyh-Chyi
Yang Shih Hsien
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Thomson W.
Winbond Electronics Corporation
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