Method for modeling an integrated circuit including a DRAM cell

Data processing: structural design – modeling – simulation – and em – Modeling by mathematical expression

Reexamination Certificate

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C703S013000, C703S014000

Reexamination Certificate

active

06845347

ABSTRACT:
Method and apparatus determine the performance of an integrated circuit that includes at least one of a plurality of deep-well trench dynamic random-access memory (DRAM) cells. The method includes executing a circuit simulator for designing an integrated circuit that contains at least one of a plurality of DRAM cells. Further, the method includes calculating a set of output parameters with the circuit simulator for each of the plurality of DRAM cells utilizing, for example, a deep-well trench DRAM cell model for each of the plurality of DRAM cells.

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