Method for mirror passivation of semiconductor laser diodes

Details Method for mirror passivation of semiconductor laser diodes Method for mirror passivation of semiconductor laser diodes

1991-08-21

1992-09-01

Lee, John D.

Coherent light generators

Particular active media

Semiconductor

H01S 319

Patent

active

051446340

ABSTRACT:
A method for passivating mirrors in the process of fabricating semiconductor laser diodes is disclosed. Key steps of the method are: (1) providing a contamination-free mirror facet, followed by (2) an in-situ application of a continuous, insulating (or low conductive) passivation layer. This layer is formed with material that acts as a diffusion barrier for impurities capable of reacting with the semiconductor but which does not itself react with the mirror surface. The contamination-free mirror surface is obtained by cleaving in a contamination-free environment, or by cleaving in air, followed by mirror etching, and subsequent mirror surface cleaning. The passivation layer consists of Si, Ge or Sb.

REFERENCES:
patent: 4656638 (1987-04-01), Tihanyi et al.

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