Method for mirror passivation of semiconductor laser diodes

Details Method for mirror passivation of semiconductor laser diodes Method for mirror passivation of semiconductor laser diodes

1990-06-15

1991-11-05

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG95, 148DIG65, H01L 21203

Patent

active

050631730

ABSTRACT:
A method for passivating mirrors in the process of fabricating semiconductor laser diodes is disclosed. Key steps of the method are: (1) providing a contamination-free mirror facet, followed by (2) an in-situ application of a continuous, insulating (or low conductive) passivation layer. This layer is formed with material that acts as a diffusion barrier for impurities capable of reacting with the semiconductor but which does not itself react with the mirror surface.
The contamination-free mirror surface is obtained by cleaving in a contamination-free environment, or by cleaving in air, followed by mirror etching, and subsequent mirror surface cleaning. The passivation layer consists of Si, Ge or Sb.

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patent: 4656638 (1987-04-01), Tihanyi et al.
patent: 4933302 (1990-06-01), Costrini
D. K. Ferry, Gallium Arsenide Technology, vol. 2 (1984), Howard W. Sams & Co., Carmel, Ind.; pp. 420-422 and 426-431.
K. Asakawa & S. Sugata, "GaAs and AlGaAs Anisotropic Fine Pattern Etching Using a New Reactive Ion Beam Etching System", J. Vacuum Science Technology B, 3(1), Jan./Feb. 1985, pp. 402-405.
European Search Report EP 89 81 0668.
IEEE Transactions on Electron Devices, vol. ED-34, No. 11, Nov. 1987, pp. 2378-2379, Uchida et al., "Novel AlGaAs Laser with High-Quality Mirror Fabricated by Reactive Ion-Beam Etching and In-Situ Passivation Using Enclosed UHV Processing System".

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