Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1997-11-19
2000-04-04
Utech, Benjamin L.
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438714, 438720, 216 71, 216 75, 216 76, 216 78, H01L 21302
Patent
active
060461160
ABSTRACT:
A method for minimizing the critical dimension growth of a feature on a semiconductor wafer includes performing an etch operation in a reactor 20 and controlling the temperature of the wafer 26 by controlling the pressure of the gas contacting the backside of the wafer 26 and/or providing a heat source 56 such as for example in the chuck 46 or electrode 28 associated with the wafer 26 in order to heat the wafer 26.
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PCT Notification of Transmittal of the International Search Report or the Declaration for PCT/US98/23297, Int'l Filing Date Nov. 3, 1998, mailed Feb. 18, 1999.
Cofer Alfred
DeOrnellas Stephen P.
Jerde Leslie G.
Olson Kurt A.
Rajora Paritosh
Goudreau George
Tegal Corporation
Utech Benjamin L.
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