Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1983-12-19
1986-02-18
Saba, William G.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29576E, 148191, 148DIG7, 148DIG37, 148DIG145, 156612, 357 20, 357 34, 357 90, H01L 2120, H01L 2174
Patent
active
045712751
ABSTRACT:
The method suggests the replacement of all or part of the solid or blanket buried region, typically a subcollector region of a bipolar transistor, by a mesh or stripe shaped subcollector. During subsequent thermal processing involving growth of the epitaxial layer, the stripes will at least partially merge, resulting in a solid subcollector. The method of minimizing autodoping implies only a special design of the subcollector mask. Therefore, there is no longer any need for technological changes either in the process or in the equipment. The method also applies to other buried layers, such as, subemitters, resistors, bottom isolation regions, etc.
REFERENCES:
patent: 3189494 (1965-06-01), Short
patent: 3260902 (1966-07-01), Porter
patent: 3436282 (1969-04-01), Shoda
patent: 3479233 (1969-11-01), Lloyd
patent: 3510736 (1970-05-01), Dingwall
patent: 3916431 (1975-10-01), Khajezadeh
patent: 3967307 (1976-06-01), Muller et al.
patent: 3976512 (1976-08-01), De Nora et al.
Shepard, et al., "Epitaxial Isolation and Device Fabrication" IBM Tech. Discl. Bull., vol. 13, No. 9, Feb. 1971, pp. 2548-2549.
H. M. Demsky, et al., IBM Technical Disclosure Bulletin, "Technique for Counteracting Epitaxial Autodoping", Aug. 1970, vol. 13, No. 3, pp. 807-808.
R. L. Bratter, et al., IBM Technical Disclosure Bulletin, "Minimizing Autodoping from a Substrate During the Deposition of a Silicon Epitaxial Layer", Apr. 1973, vol. 15, No. 11, p. 3385.
D. J. Fleming, et al., IBM Technical Disclosure Bulletin, "Prevention of Autodoping During Silicon Epitaxial Deposition", Aug. 1977, vol. 20, No. 3, pp. 1083-1084.
A. K. Gaind, et al., IBM Technical Disclosure Bulletin, "Complete Oxide Isolation of Semiconductor Epitaxial Layer", Jul. 1978, vol. 21, No. 2, pp. 597-598.
C. M. McKenna, et al., IBM Technical Disclosure Bulletin, "Subcollector Capping", Mar. 1979, vol. 21, No. 10, p. 4017.
A. K. Gaind, et al., IBM Technical Disclosure Bulletin, "Eliminating Boron and Arsenic Autodoping Through Reduced Pressure", Aug. 1981, vol. 24, No. 3, pp. 1731-1734.
International Business Machines - Corporation
Saba William G.
Saile George O.
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