Method for micromachining semiconductor material

Details Method for micromachining semiconductor material Method for micromachining semiconductor material

1991-05-03

1993-07-06

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437901, H01L 21306

Patent

active

052253775

ABSTRACT:
A structure is formed from two layers of material having opposite conductivity types. A first region is formed within the structure, and extends at least in part into a layer to be etched. A surface of the structure is then masked and etched. The result is a microstructure which varies with the conductivity type and geometry of the region formed and etchant used.

REFERENCES:
patent: 3767494 (1973-10-01), Muraoka et al.
patent: 4665610 (1987-05-01), Barth
patent: 4840920 (1989-06-01), Suda
patent: 5006476 (1991-04-01), DeJong et al.
patent: 5059556 (1991-10-01), Wilcoxen

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