Coating processes – With stretching or tensioning
Patent
1993-11-16
1996-06-11
Bell, Janyce
Coating processes
With stretching or tensioning
20419214, 427 97, 427 99, 427172, 427250, 427322, 4273982, 427404, 427409, B05D 512, B05D 312
Patent
active
055253695
ABSTRACT:
A method for vapor phase depositing a thin seed layer of, for example, chromium and copper onto the side walls of through holes in thin film substrates of, for example, polyimide is disclosed. This method is useful in fabricating devices such as a thin film semiconductor chip carrier in which a semiconductor chip mounted on one major surface of the chip carrier is electrically connected to a ground plane and/or a power conductor on the other major surface of the chip carrier via one or more metallized through holes.
REFERENCES:
patent: 3881884 (1975-05-01), Cook
patent: 4446170 (1984-05-01), Watanabe
patent: 4489124 (1984-12-01), Watanabe
patent: 4569902 (1986-02-01), Saito
patent: 4661229 (1987-04-01), Hemming
patent: 4886681 (1989-12-01), Clabes
patent: 4917963 (1990-04-01), Kittler
patent: 5013402 (1991-05-01), Yarita
patent: 5151304 (1992-09-01), Lee
patent: 5196100 (1993-03-01), Goffetre
patent: 5274521 (1993-12-01), Miyauchi
patent: 5302492 (1994-04-01), Ott
Blackwell Kim J.
Chen Pei C.
Deliman Stephen E.
Knoll Allan R.
Matarese George J.
Bell Janyce
International Business Machines - Corporation
Tiegerman Bernard
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