Method for metallizing through holes in thin film substrates, an

Details Method for metallizing through holes in thin film substrates, an Method for metallizing through holes in thin film substrates, an

1991-10-17

1994-02-22

Ryan, Patrick J.

Stock material or miscellaneous articles

Structurally defined web or sheet

Discontinuous or differential coating, impregnation or bond

428901, B32B 900

Patent

active

052885410

ABSTRACT:
A method for vapor phase depositing a thin seed layer of, for example, chromium and copper onto the side walls of through holes in thin film substrates of, for example, polyimide is disclosed. This method is useful in fabricating devices such as a thin film semiconductor chip carrier in which a semiconductor chip mounted on one major surface of the chip carrier is electrically connected to a ground plane and/or a power conductor on the other major surface of the chip carrier via one or more metallized through holes.

REFERENCES:
patent: 4254172 (1981-03-01), Takahashi et al.
patent: 4826720 (1989-05-01), Wade
patent: 4937133 (1990-06-01), Watanabe et al.

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