Method for metallization of photovoltaic cells with multiple...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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C438S072000, C257S431000, C257S432000, C257S437000

Reexamination Certificate

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07943417

ABSTRACT:
Method for metallization of at least one photovoltaic cell comprising a substrate based on a semiconductor with a first type of conductivity, a layer doped with a second type of conductivity produced in the substrate and forming a front face of the substrate, an antireflection layer produced on the front face of the substrate and forming a front face of the photovoltaic cell. The method comprises at least the steps of:a) producing at least one metallization on the front face of the photovoltaic cell,b) a first annealing of the photovoltaic cell at a temperature between around 800° C. and 900° C.,c) producing at least one metallization on the rear face of the substrate,d) a second annealing of the photovoltaic cell at a temperature between around 700° C. and 800° C.

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