Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized
Reexamination Certificate
2005-05-03
2005-05-03
Chen, Bret (Department: 1762)
Coating processes
Coating by vapor, gas, or smoke
Mixture of vapors or gases utilized
C427S255330, C427S255350, C427S255360
Reexamination Certificate
active
06887523
ABSTRACT:
An MOCVD process is provided for forming metal-containing films having the general formula M′xM″(1−x)MyOz, wherein M′ is a metal selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Y, Sc, Yb, Lu, and Gd; M″ is a metal selected from the group consisting of Mg, Ca, Sr, Ba, Pb, Zn, and Cd; M is a metal selected from the group consisting of Mn, Ce, V, Fe, Co, Nb, Ta, Cr, Mo, W, Zr, Hf and Ni; x has a value from 0 to 1; y has a value of 0, 1 or 2; and z has an integer value of 1 through 7. The MOCVD process uses precursors selected from alkoxide precursors, β-diketonate precursors, and metal carbonyl precursors in combination to produce metal-containing films, including resistive memory materials.
REFERENCES:
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patent: 6204139 (2001-03-01), Liu et al.
patent: 6444264 (2002-09-01), Hintermaier et al.
Article entitled, “Reproducible switching effect in thin oxide films for memory applications,” by A. Beck et al. published in Applied Physics Letters on Jul. 3, 2000, vol. 7, No. 1 pp. 139-141.
Hsu Sheng Teng
Pan Wei
Zhuang Wei-Wei
Chen Bret
Curtin Joseph P.
Rabdau Matthew D.
Ripma David C.
Sharp Laboratories of America Inc.
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