Method for metal gate quality characterization

Details Method for metal gate quality characterization Method for metal gate quality characterization

2011-03-15

2011-03-15

Quach, Tuan N. (Department: 2893)

Semiconductor device manufacturing: process

With measuring or testing

Optical characteristic sensed

C438S197000, C438S592000, C257SE21530, C257SE21622

Reexamination Certificate

active

07906351

ABSTRACT:
Measuring the amount of unreacted polysilicon gate material in a fully silicided (FUSI) nickel silicide gate process for metal oxide semiconductor (MOS) transistors in an integrated circuit (IC) to guide process development and monitor IC production requires a statistically significant sample size and an economical procedure. A method is disclosed which includes a novel deprocessing sequence of oxidizing the nickel followed by removing the nickel silicide by acid etching, acquiring an SEM image of a deprocessed area encompassing a multitude of gates, forming a quantifiable mask of the original gate area in the SEM image, forming a quantifiable image of the unreacted polysilicon area in the SEM image, and computing a fraction of unreacted polysilicon.

REFERENCES:
patent: 6853143 (2005-02-01), Nakasuji et al.
patent: 7232997 (2007-06-01), Edinger et al.
patent: 7727842 (2010-06-01), Mehrad et al.
patent: 7816213 (2010-10-01), Matsuki
patent: 2009/0053883 (2009-02-01), Colombo et al.
patent: 2009/0232385 (2009-09-01), Matsuoka et al.

Affiliated with

Also associated with

Rating

Method for metal gate quality characterization does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for metal gate quality characterization, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for metal gate quality characterization will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2663318