Method for metal deposition without poison via

Details Method for metal deposition without poison via Method for metal deposition without poison via

1993-09-27

1995-07-11

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437978, H01L 21441

Patent

active

054320739

ABSTRACT:
A new method of metal deposition in an integrated circuit is described. Semiconductor device structures are provided in and on a semiconductor substrate. At least one patterned conductive layer is provided for contacting the active elements of the device structures. The surface of the patterned conductive layer structure is irregular with horizontal and vertical components. An insulating layer is provided over the irregular structure patterned conductive layer. The insulator layer is covered with at least one spin-on-glass layer to fill the valleys of the irregular structure. The spin-on-glass layer is baked and cured, then covered with a second insulator layer. The spin-on-glass and two insulator layers are etched to provide openings to the patterned conductive layer wherein the etching is performed at low temperature so as to decrease the possibility of device degradation. The exposed spin-on-glass layer within the openings is degassed at a high temperature. A metal layer is sputtered over the surface of the substrate and filling the openings to the conductive layer and patterned to complete the metal deposition in the manufacture of integrated circuits.

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Silicon Processing for the VLSI Era, vol. 2 by S. Wolf, 1990.

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