Method for memorizing a data bit in an integrated mos-type stati

Details Method for memorizing a data bit in an integrated mos-type stati Method for memorizing a data bit in an integrated mos-type stati

1987-07-29

1989-06-27

James, Andrew J.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 57, 357 2312, 365182, H01L 2978

Patent

active

048434426

ABSTRACT:
A method for memorizing a data bit in an integrated static MOS-type RAM, a transistor for performing the method, and a memory produced by the method are described. An MOS transistor with a weakly doped channel has a hysteresis phenomenon with subthreshold conduction. The transistor is advantageously used as a memory element in an integrated static RAM cell.

REFERENCES:
patent: 3733591 (1973-05-01), Cricchl
patent: 3974486 (1975-08-01), Curtis et al.
patent: 4142111 (1979-02-01), McElroy
Troutman, R.-"VLSI Limitations From Drain-Induced Barrier Lowering" IEEE Tran. on Elec. Dev. vol. ED-26 No. 4 Apr. 1979, pp. 461-469.
Toyabe, T. et al., "Analytical Models of Threshold Voltage . . ." IEEE Tran. on Elec. Dev. vol. ED-26 No. 4 Apr. 1979 pp. 453-460.
Alain Boudou et al., "Hysteresis I-V Effects in Short-Channel Silicon MOSFET's", IEEE Electron Device Letters, vol. EDL-8, No. 7, Jul. 1987, pp. 300-302.
Brian S. Doyle et al., "Relaxation Effects in NMOS Transistors After Hot-Carrier Stressing", IEEE Electron Device Letters, vol. EDL-8, No. 5, May 1987, pp. 234-236.
John R. Brews, "Geometrical Factors in Avalanche Punchthrough Erase", IEEE Transactions on Electron Devices, vol. ED-24, No. 8, Aug. 1977, pp. 1108-1116.
Masaaki Aoki et al., "Performance and Hot-Carrier Effects of Small CRYO-CMOS Devices", IEEE Transactions On Electron Devices, vol. ED-34, No. 1, Jan. 1987, pp. 8-18.

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