Method for measuring thickness of oxide film

Details Method for measuring thickness of oxide film Method for measuring thickness of oxide film

2005-04-26

2005-04-26

Lee, John R. (Department: 2881)

Optics: measuring and testing

Dimension

Thickness

C356S128000, C356S364000, C356S367000, C356S369000, C356S370000, C438S014000, C438S016000, C438S770000, C250S559110, C250S559190, C250S559200, C250S559270

Reexamination Certificate

active

06885466

ABSTRACT:
In a process of manufacturing a semiconductor device, after a gate oxide film is formed, the thickness of the gate oxide film is measured by measuring an exposure period defined from a time at which the oxide film is formed to a time at which the thickness of the oxide film is measured. In addition, if necessary, the measurement of the oxide film is corrected to determine the real thickness based on the exposure period. Accordingly, the thickness of the gate oxide film can be measured accurately.

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