Electricity: measuring and testing – Impedance – admittance or other quantities representative of... – Lumped type parameters
Patent
1998-03-02
2000-07-18
Do, Diep N.
Electricity: measuring and testing
Impedance, admittance or other quantities representative of...
Lumped type parameters
324715, 324724, 324756, 250306, G01K 3126, H01J 3726
Patent
active
060912480
ABSTRACT:
Measuring an electrical potential in a semiconductor element by applying one or more voltages over the semiconductor element, placing at least one conductor in contact with the semi-conductor element using a scanning proximity microscope while injecting a substantially zero current in the semiconductor element with the conductor, measuring an electrical potential in the conductor while injecting a substantially zero current in the semiconductor element with the conductor, changing the position of the conductor, and repeating the measuring and changing steps.
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Dimension 3000 Scanning Probe Instruction Manual, 1966, month unavailable.
Brennan, Roger et al., "Determination of Diffusion Characteristics Using Two- and Four-Point Probe Measurements", Solid State Technology, No. 12, Dec. 1984, pp. 125-132.
Heddleson, J.M. et al., "Profiling of Silicide-Silicon Structures Using a Combination of the Spreading Resistance and Point Contact Current-Voltage Methods", J. Vac. Sci. Technol. B 12(1), Jan./Feb. 1994, pp. 317-321.
de Wolf Peter
Hellemans Louis C.
Trenkler Thomas
Vandervorst Wilfried
Do Diep N.
IMEC vzw
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