Method for measuring the drift mobility in doped semiconductors

Details Method for measuring the drift mobility in doped semiconductors Method for measuring the drift mobility in doped semiconductors

1980-03-24

1982-03-09

Karlsen, Ernest F.

Electricity: measuring and testing

Measuring, testing, or sensing electricity, per se

With rotor

G01R 3126

Patent

active

043191878

ABSTRACT:
A method for measuring the drift mobility of majority carriers in semiconductors consists of measuring the current transient in a Schottky-barrier device following the termination of a forward bias pulse. An example is given using an amorphous silicon hydrogenated material doped with 0.2% phosphorous. The method is particularly useful with material in which the dielectric relaxation time is shorter than the carrier transit time. It is particularly useful in material useful in solar cells.

REFERENCES:
Fink, H. J., "Reverse Recovery . . . ", Solid State Electronics, vol. 7, 1964, pp. 823-831.
"Switching Circuits: Measuring Recovery Time", Electronic Design, Nov. 11, 1959, pp. 199-203.
Spear, W. E., "Drift Mobility . . . ", Journal of Non-Crystalline Solids, vol. 1, 1969, pp. 197-214.
Many et al., "Theory of Transient . . . ", vol. 126, No. 6, Physical Review, Jun. 15, 1962, pp. 1980-1988.

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