Method for measuring semiconductor constituent element...

Details Method for measuring semiconductor constituent element... Method for measuring semiconductor constituent element...

2005-02-22

2005-02-22

Sarkar, Asok Kumar (Department: 2829)

Semiconductor device manufacturing: process

With measuring or testing

Optical characteristic sensed

C438S014000, C356S937000

Reexamination Certificate

active

06858454

ABSTRACT:
A method for measuring semiconductor constituent element content utilizes the steps of: obtaining a film thickness of an SiGeC layer formed on a semiconductor substrate by evaluation using spectroscopic ellipsometry; measuring infrared absorption spectrum of the SiGeC layer; and obtaining a C content of the SiGeC layer based on the film thickness and the infrared absorption spectrum of the SiGeC layer. The method: obtaining an apparent Ge content of the SiGeC layer by evaluation using spectroscopic ellipsometry; and obtaining an actual Ge content of the SiGeC layer based on the apparent Ge content and the C content. The constituent element content of the SiGeC layer can be easily and accurately measured according to the above-mentioned method.

REFERENCES:
patent: 6518572 (2003-02-01), Kishii et al.
patent: 20020106819 (2002-08-01), Nozawa et al.
patent: 20040014250 (2004-01-01), Peterson et al.

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