Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element
Patent
1996-06-28
1998-11-24
Nguyen, Vinh P.
Electricity: measuring and testing
Fault detecting in electric circuits and of electric components
Of individual circuit component or element
G01R 3126
Patent
active
058412948
ABSTRACT:
A simple and accurate measurement of leakage current in the junction region of a semiconductor device involves a simple processing step carried out after element-isolating oxide films are formed. A method of measuring the junction leakage current involves providing a first-conduction-type silicon substrate, forming a first-conduction-type well in the substrate, forming element-isolating oxide films on the substrate, implanting second-conduction-type impurity ions in the substrate to form impurity diffusion regions, forming a conductive layer for an electrode over a resulting structure. Then, the method involves patterning the conductive layer to define plural dies that each have plural cells that each include the impurity diffusion regions and the conductive layer. Finally, reverse voltage is applied to the impurity diffusion regions and the substrate so as to measure the junction leakage current.
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Jang Se Aug
Song Tae Sik
Hyundai Electronics Industries Co,. Ltd.
Nguyen Vinh P.
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