Method for measuring lattice defects in semiconductor

Details Method for measuring lattice defects in semiconductor Method for measuring lattice defects in semiconductor

1987-12-22

1989-02-14

Levy, Stewart J.

Measuring and testing

Vibration

By mechanical waves

73597, 374117, G01N 2904

Patent

active

048038849

ABSTRACT:
A method for measuring lattice defects in semiconductor such as a silicon crystal, detects an ultrasonic velocity of an ultrasonic pulse propagating through the semiconductor to which heat is variably applied. An elastic constant of the semiconductor is calculated from the ultrasonic velocity, and a concentration or density of lattice defects of the semiconductor is obtained by converting the elastic constant.

REFERENCES:
patent: 4342518 (1982-08-01), Shirley
patent: 4366713 (1983-01-01), Gilmore et al.
patent: 4621233 (1986-11-01), Davari et al.

Affiliated with

Also associated with

Rating

Method for measuring lattice defects in semiconductor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for measuring lattice defects in semiconductor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for measuring lattice defects in semiconductor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1359582