Method for measuring ions implanted into a semiconductor substra

Details Method for measuring ions implanted into a semiconductor substra Method for measuring ions implanted into a semiconductor substra

1991-09-30

1993-02-09

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 7, 437 24, 148DIG56, H01L 2166

Patent

active

051852730

ABSTRACT:
A method is provided for correlating ion implantation from a silicon wafer (13) to a gallium arsenide wafer. A first dose of a predetermined amount of silicon ions is implanted into a silicon wafer (13). The first dose of the implanted silicon ions in the silicon wafer (13) is evaluated by a measuring system (10) that monitors a modulated reflected signal from the silicon wafer (13) and quantifies the signal as to the number of implanted silicon ions in the silicon wafer. If the measured quantity of implanted silicon ions is a desired amount of implanted silicon ions the same number of silicon ions is then implanted into the gallium arsenide wafer.

REFERENCES:
patent: 4755049 (1988-07-01), Bomback et al.
patent: 4799392 (1989-01-01), Wilson et al.
patent: 5074669 (1991-12-01), Opsal
W. L. Smith et al., "Use of Thermal Waves to Measure Dose and Uniformity of Si.sup.+ and Be.sup.+ Implants into GaAs", SPIE, vol. 530, 1985.
Opsal et al., "Temporal Behavior of Modulated Optical Reflectance in Silicon", J. Appl. Phys., vol. 61, No. 1, Jan. 1987.

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